Nexperia PMXB65ENEZ MOSFETs
PMXB65ENE - 30 V, N-channel Trench MOSFET DFN 3-Pin
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMXB65ENEZ
Detailed Description
PMXB65ENE - 30 V, N-channel Trench MOSFET DFN 3-Pin
Package
DFN-1010-3
Lifecycle Status
Active
Datasheet
PMXB65ENEZ Datasheet
Quick Jump:
Technical Specifications
Nexperia PMXB65ENEZ MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
3.2 A
Rds on Drain Source Resistance
67 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (PMXB65ENEZ vs PMXB43UNEZ vs PMXB40UNEZ vs PMXB75UPEZ)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | -- | SMD/SMT | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Yes | Yes | -- |
| Technology | Si | -- | Si | MOSFET (Metal Oxide) |
| Number of Channels | 1 Channel | -- | 1 Channel | -- |
| Channel Mode | Enhancement | -- | Enhancement | -- |
| Configuration | Single | -- | Single | -- |
| ID Continuous Drain Current | 3.2 A | -- | 3.2 A | -- |
| Package | DFN-1010-3 | -- | DFN1010D-3 | -- |
| Part Aliases | 934067148147 | -- | 934067145147 | -- |
| Pd Power Dissipation | 1.07 W | -- | 1.07 W | -- |
| Qg Gate Charge | 11 nC | -- | 11.6 nC | -- |
| Action |
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