Nexperia PMV50UPE,215 MOSFETs
P-channel enhancement mode MOSFET, SOT-23 package, featuring 20V drain-source voltage and 3.2A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PMV50UPE,215 MOSFETs technical specifications.
General
Alternate Parts Comparison (PMV50UPE,215 vs PMV50UPE vs PMV56XN/DG,215 vs PMV185XN)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 150°C | -55°C ~ 150°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| AEC Qualified | No | No | No | No |
| Automotive | No | No | No | No |
| Basic Package Type | Lead-Frame SMT | Lead-Frame SMT | Lead-Frame SMT | Lead-Frame SMT |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | Small Signal | Small Signal | Power MOSFET | Small Signal |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | P | P | N | N |
| Configuration | Single | Single | Single | Single |
| Jedec | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
| Action |
Nexperia PMV50UPE,215 MOSFETs Overview
P-channel enhancement mode MOSFET, SOT-23 package, featuring 20V drain-source voltage and 3.2A continuous drain current. This single-element TMOS process transistor offers a maximum gate-source voltage of 8V and a low 66mOhm drain-source resistance at 4.5V. The surface-mount device has a 3-pin gull-wing lead configuration with a 0.95mm pin pitch and dimensions of 3mm x 1.4mm x 1mm.
Operating temperature range is -55°C to 150°C.
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