Nexperia PMN35EN,125 MOSFETs
N-channel enhancement mode MOSFET in a 6-pin TSOP package, designed for surface mounting.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMN35EN,125
Detailed Description
N-channel enhancement mode MOSFET in a 6-pin TSOP package, designed for surface mounting. Features a 30V drain-source voltage, 5.1A continuous drain current, and 2.5V gate threshold voltage. Offers low drain-source on-resistance of 31mΩ at 10V. Suitable for small signal applications with a maximum power dissipation of 1250mW and an operating temperature range of -55°C to 150°C.
Package
TSOP
Key Features
Package: TSOP
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PMN35EN,125 Datasheet
Quick Jump:
Technical Specifications
Nexperia PMN35EN,125 MOSFETs technical specifications.
General
RoHS
Yes
Number of Pins
6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Package
TSOP
Pcb
6
Package Length Mm
3.1(Max)
Package Width Mm
1.7(Max)
Package Height Mm
1(Max)
Configuration
Single Quad Drain
Alternate Parts Comparison (PMN35EN,125 vs PMN20ENAX vs PMN55ENEAX vs PMN40ENAX)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | -- | -- |
| Operating Temperature | -55°C ~ 150°C | -- | -- | -- |
| Number of Pins | 6 | -- | -- | -- |
| RoHS | Yes | -- | -- | -- |
| AEC Qualified | No | -- | -- | -- |
| Automotive | No | -- | -- | -- |
| Cage Code | H2HX9 | -- | -- | -- |
| Category | Small Signal | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Channel Type | N | -- | -- | -- |
| Configuration | Single Quad Drain | -- | -- | -- |
| Maximum Continuous Drain Current | 5.1A | -- | -- | -- |
| Action |
Nexperia PMN35EN,125 MOSFETs Overview
N-channel enhancement mode MOSFET in a 6-pin TSOP package, designed for surface mounting. Features a 30V drain-source voltage, 5.1A continuous drain current, and 2.5V gate threshold voltage. Offers low drain-source on-resistance of 31mΩ at 10V. Suitable for small signal applications with a maximum power dissipation of 1250mW and an operating temperature range of -55°C to 150°C.
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