Nexperia PMF87EN,115 MOSFETs
Surface mount N-channel enhancement mode MOSFET in a 3-pin SC-70 package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMF87EN,115
Base Model
Detailed Description
Surface mount N-channel enhancement mode MOSFET in a 3-pin SC-70 package. Features a 30V drain-source voltage, 1.7A continuous drain current, and 80mΩ drain-source resistance at 10V. This single element transistor utilizes TMOS process technology and offers a maximum power dissipation of 355mW. Operating temperature range is -55°C to 150°C.
Package
SC-70
Key Features
Package: SC-70
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PMF87EN,115 Datasheet
Quick Jump:
Technical Specifications
Nexperia PMF87EN,115 MOSFETs technical specifications.
General
RoHS
Yes
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Package
SC-70
Pcb
3
Package Length Mm
2.2(Max)
Package Width Mm
1.35(Max)
Package Height Mm
1(Max)
Jedec
MO-203AA
Alternate Parts Comparison (PMF87EN,115 vs PMF87EN vs PMF170XP,115 vs PMF250XNEX)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | -- | -- |
| Operating Temperature | -55°C ~ 150°C | -55°C ~ 150°C | -- | -- |
| Number of Pins | 3 | 3 | -- | -- |
| RoHS | Yes | Yes | -- | -- |
| AEC Qualified | No | No | -- | -- |
| Automotive | No | No | -- | -- |
| Cage Code | H2HX9 | H2HX9 | -- | -- |
| Category | Small Signal | Small Signal | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Channel Type | N | N | -- | -- |
| Configuration | Single | Single | -- | -- |
| Jedec | MO-203AA | MO-203AA | -- | -- |
| Action |
Nexperia PMF87EN,115 MOSFETs Overview
Surface mount N-channel enhancement mode MOSFET in a 3-pin SC-70 package. Features a 30V drain-source voltage, 1.7A continuous drain current, and 80mΩ drain-source resistance at 10V. This single element transistor utilizes TMOS process technology and offers a maximum power dissipation of 355mW. Operating temperature range is -55°C to 150°C.
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