Nexperia PMDT290UCE,115 MOSFETs
PMDT290UCE - 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET SOT 6-Pin
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMDT290UCE,115
Detailed Description
PMDT290UCE - 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET SOT 6-Pin
Package
SOT-563
Lifecycle Status
Active
Datasheet
PMDT290UCE,115 Datasheet
Quick Jump:
Technical Specifications
Nexperia PMDT290UCE,115 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
800 mA
Rds on Drain Source Resistance
290 mOhms, 670 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (PMDT290UCE,115 vs PMDT290UNE,115 vs PMDT670UPE,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Mounting Type | SMD/SMT | -- | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C |
| Number of Channels | 2 Channel | -- | 2 Channel |
| RoHS | Yes | -- | Yes |
| Channel Mode | Enhancement | -- | Enhancement |
| ID Continuous Drain Current | 800 mA | -- | 550 mA |
| Package | SOT-563 | -- | SOT-563 |
| Part Aliases | 934065733115 | -- | 934065734115 |
| Pd Power Dissipation | 330 mW | -- | 1.09 W |
| Qg Gate Charge | 680 pC, 1.14 nC | -- | 760 pC |
| Rds on Drain Source Resistance | 290 mOhms, 670 mOhms | -- | 670 mOhms |
| Technology | Si | -- | Si |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
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