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Nexperia PMBS3904/DG,215 BJTs

NPN Bipolar Junction Transistor (BJT) for general-purpose applications.

In Stock ActiveNexperiaSOT-23
PMBS3904/DG,215 - No Image Available

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PMBS3904/DG,215
Manufacturer
Part Number (MPN)
PMBS3904/DG,215
Detailed Description
NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 40V and a continuous collector current of 0.1A, with a power dissipation of 250mW. This single-element transistor is housed in a 3-pin SOT-23 (TO-236AB) surface-mount package with gull-wing leads. Offers a minimum DC current gain ranging from 40 to 100 across specified collector currents and a minimum transition frequency of 180MHz. Operates across a wide temperature range f...
Package
SOT-23
Key Features
Package: SOT-23
Lifecycle Status
Active
Datasheet
PDF PMBS3904/DG,215 Datasheet
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Technical Specifications

Nexperia PMBS3904/DG,215 BJTs technical specifications.

General

Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pcb
3
Package Length Mm
3(Max)

Alternate Parts Comparison (PMBS3904/DG,215 vs BCW70,215 vs PBSS4120T,215 vs PBSS4320T,215)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-65°C ~ 150°C-65 °C ~ 150 °C-65 °C ~ 150 °C-65 °C ~ 150 °C
Number of Pins3333
PackageSOT-23SOT-23SOT-23SOT-23
Power Dissipation250mW250 mW480 mW1.2 W
Schedule B8541210080854121008085412100808541290080
Lifecycle Status--ProductionProductionProduction
China ROHS--CompliantCompliantCompliant
Collector Base Voltage Vcbo--50 V30 V20 V
Collector Emitter Breakdown Voltage--45 V20 V20 V
Collector Emitter Voltage Vceo--45 V20 V20 V
Contact Plating--TinTinTin
Action

Nexperia PMBS3904/DG,215 BJTs Overview

NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 40V and a continuous collector current of 0.1A, with a power dissipation of 250mW. This single-element transistor is housed in a 3-pin SOT-23 (TO-236AB) surface-mount package with gull-wing leads. Offers a minimum DC current gain ranging from 40 to 100 across specified collector currents and a minimum transition frequency of 180MHz.

Operates across a wide temperature range f...

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