Nexperia PHB27NQ10T,118 MOSFETs
N-channel TrenchMOS standard level FET D2PAK 3-Pin
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PHB27NQ10T,118
Detailed Description
N-channel TrenchMOS standard level FET D2PAK 3-Pin
Package
TO-263-3
Lifecycle Status
Active
Datasheet
PHB27NQ10T,118 Datasheet
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Technical Specifications
Nexperia PHB27NQ10T,118 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
28 A
Rds on Drain Source Resistance
50 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (PHB27NQ10T,118 vs PHB32N06LT,118 vs PSMN1R5-30BLEJ vs BSH205G2AR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-263-3 | D2PAK-3 | TO-263-3 | SOT23-3 |
| Lifecycle Status | -- | Production | Production | Production |
| Automotive Qualified | -- | N | N | Y |
| Channel Type | -- | N | N | P |
| Chemical Content | -- | PHB32N06LT | PSMN1R5-30BLE | BSH205G2A |
| Ciss Typ Pf | -- | 920 | 14934 | 421 |
| Coss Typ Pf | -- | 160 | 2741 | 38 |
| Date | -- | 2010-11-13 | 2012-09-21 | 2020-10-13 |
| ID Max a | -- | 34 | 120 | -2.6 |
| Nr of Transistors | -- | 1 | 1 | 1 |
| Ptot Max W | -- | 97 | 401 | 0.61 |
| Action |
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Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
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