Nexperia BUK9MPP-55PRR MOSFETs
N-channel enhancement mode power MOSFET, dual configuration, featuring 55V drain-source voltage and 9.16A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia BUK9MPP-55PRR MOSFETs technical specifications.
General
Related Parts Comparison (BUK9MPP-55PRR vs BUK9M3R3-40HX vs BUK9K32-100EX vs BUK9Y1R9-40HX)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Number of Pins | 20 | -- | 8 | 4 |
| Mounting Type | Surface Mount | -- | Surface Mount | -- |
| Operating Temperature | -55°C ~ 150°C | -- | -55°C ~ 175°C (TJ) | -- |
| Package | SO | LFPAK-33-8 | -- | -- |
| Schedule B | 8541290080 | -- | 8541290080 | -- |
| AEC Qualified | No | -- | -- | -- |
| Automotive | No | -- | -- | -- |
| Cage Code | H2HX9 | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Channel Type | N | -- | -- | -- |
| Configuration | Dual | -- | -- | -- |
| Maximum Continuous Drain Current | 9.16A | -- | -- | -- |
| Action |
Nexperia BUK9MPP-55PRR MOSFETs Overview
N-channel enhancement mode power MOSFET, dual configuration, featuring 55V drain-source voltage and 9.16A continuous drain current. This surface-mount component utilizes TrenchP process technology and is housed in a 20-pin SO package with a 1.27mm pin pitch. Key electrical characteristics include a maximum gate-source voltage of 15V, a maximum drain-source on-resistance of 22.6 mOhm at 10V, and a typical gate charge of 23nC at 5V.
Operating temperature range spans from -55°C to 150°C.
