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Microchip Technology MSC040SMA120B MOSFETs

SICFET N-CH 1200V 66A TO247-3

1,000 ActiveMicrochip TechnologyMSC040SMATO-247-3$49.11
MSC040SMA120B TO-247-3 package illustration

Same model may have multiple batches, images only for reference.

MSC040SMA120B
Part Number (MPN)
MSC040SMA120B
Base Model
Detailed Description
SICFET N-CH 1200V 66A TO247-3
Package
TO-247-3
Lifecycle Status
Active
Datasheet
PDF MSC040SMA120B Datasheet
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Ordering Code Family

MSC040SMA groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Microchip Technology MSC040SMA120B MOSFETs technical specifications.

General

RoHS
Yes
Drain Source Voltage V Max
1200
On State Resistance Milliohms Typ
40
Continuous Drain Current at 25 Ca Max
53-67
Junction Temperature C Max
-55 - 175°C
Continuous Drain Current at 25 Cida Family Max
67
Package
TO-247-3

Related Parts Comparison (MSC040SMA120B vs MSC040SMA120J vs MSC035SMA170S vs MSC017SMA120B)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesROHS3 CompliantYesYes
PackageTO-247-3--D3PAKTO-247-3
Mounting Type--Chassis MountSMD/SMTScrew Mount
Operating Temperature---55°C ~ 175°C (TJ)- 55°C ~ + 175°C- 55°C ~ + 175°C
Number of Channels--1 Channel1 Channel1 Channel
Configuration--SingleSingleSingle
ID Continuous Drain Current--53 A59 A113 A
Pd Power Dissipation--208 W278 W455 W
Rds on Drain Source Resistance--50 mOhms35 mOhms22 mOhms
Technology--SiCFET (Silicon Carbide)SiCSiC
Transistor Polarity--N-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage--1.2 kV1.7 kV1.2 kV
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