Infineon Technologies SPP18P06PG MOSFETs
SIPMOS® Power-Transistor Features P-Channel Enhancement mode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SPP18P06PG
Base Model
Detailed Description
SIPMOS® Power-Transistor Features P-Channel Enhancement mode
Lifecycle Status
Active
Datasheet
SPP18P06PG Datasheet
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Alternate Parts Comparison (SPP18P06PG vs SPP18P06PHXKSA1 vs SPP21N50C3XKSA1 vs SPP08N80C3XKSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | -- | SIPMOS® | CoolMOS™ | CoolMOS™ |
| Package / Case | -- | TO-220-3 | TO-220-3 | TO-220 |
| Mounting Type | -- | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -- | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 | 3 | 3 |
| Lifecycle Status | -- | Active | Not For New Designs | Production |
| Continuous Drain Current ID | -- | 18.7 A | 21 A | 8 A |
| Current Continuous Drain ID 25 C | -- | 18.7A (Ta) | 21A (Tc) | 8A (Tc) |
| Drain to Source Resistance | -- | 102mO | 190mO | 650mO |
| Drain to Source Voltage Vdss | -- | 60 V | 500 V | 800 V |
| Drive Voltage Max Rds on Min Rds on | -- | 10 V | 10 V | 10 V |
| Fall Time | -- | 11 ns | 4.5 ns | 7 ns |
| Action |
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