Infineon Technologies SI4435DYPBF MOSFETs
MOSFET P-CH 30V 8A 8SO
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI4435DYPBF
Detailed Description
MOSFET P-CH 30V 8A 8SO
Package
8-SOIC
Lifecycle Status
Active
Datasheet
SI4435DYPBF Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies SI4435DYPBF MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
8 A
Rds on Drain Source Resistance
20 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Qg Gate Charge
40 nC
Alternate Parts Comparison (SI4435DYPBF vs SI4410DYPBF vs AUIRF7342QTR vs IRF7314TRPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Mounting Type | SMD/SMT | SMD/SMT | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Fall Time | 31 ns | 44 ns | -- | -- |
| ID Continuous Drain Current | 8 A | 10 A | -- | -- |
| Maximum Operating Temperature C | + 150 | + 150 | -- | -- |
| Minimum Operating Temperature C | - 55 | - 55 | -- | -- |
| Pd Power Dissipation | 2.5 W | 2.5 W | -- | -- |
| Qg Gate Charge | 40 nC | 30 nC | -- | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.