Infineon Technologies ISC080N10NM6ATMA1 MOSFETs
TRENCH >=100V PG-TDSON-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
ISC080N10NM6ATMA1
Detailed Description
TRENCH >=100V PG-TDSON-8
Package
PG-TDSON-8
Lifecycle Status
Active
Datasheet
ISC080N10NM6ATMA1 Datasheet
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Technical Specifications
Infineon Technologies ISC080N10NM6ATMA1 MOSFETs technical specifications.
General
RoHS
Yes
Lead Free
Yes
Halogen Free
Yes
Feature Configuration
Single Quad Drain Triple Source
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
100
Feature Maximum Gate Source Voltage V
20
Feature Maximum Continuous Drain Current a
13
Alternate Parts Comparison (ISC080N10NM6ATMA1 vs ISC012N04LM6ATMA1 vs BSC0902NSI vs BSC011N03LS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PG-TDSON-8 | PG-TDSON-8 | PG-TDSON-8 | PG-TDSON-8 |
| Feature AEC Qualified | No | No | -- | -- |
| Feature Auto Motive | No | No | -- | -- |
| Feature Military | No | No | -- | -- |
| Feature P Pap | No | No | -- | -- |
| Feature Pin Count | 8 | 8 | -- | -- |
| Feature Svhc Exceeds Threshold | No | No | -- | -- |
| Halogen Free | Yes | Yes | -- | -- |
| Lead Free | Yes | Yes | -- | -- |
| Feature Channel Mode | Enhancement | -- | -- | -- |
| Feature Channel Type | N | -- | -- | -- |
| Action |
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