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Infineon Technologies IRS2008MPBFAUMA1 Gate Drivers

LEVEL SHIFT JUNCTION ISO

659 ActiveInfineon Technologies14-VFQFN Exposed PadRoHS
IRS2008MPBFAUMA1 14-VFQFN Exposed Pad package illustration

Same model may have multiple batches, images only for reference.

IRS2008MPBFAUMA1
Part Number (MPN)
IRS2008MPBFAUMA1
Detailed Description
LEVEL SHIFT JUNCTION ISO
Package
14-VFQFN Exposed Pad
Key Features
Package / Case: 14-VFQFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF IRS2008MPBFAUMA1 Datasheet
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Technical Specifications

Infineon Technologies IRS2008MPBFAUMA1 Gate Drivers technical specifications.

General

RoHS
Yes
Package / Case
14-VFQFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TA)
Supply Voltage
10V ~ 20V
Lifecycle Status
Active
Input Type
CMOS
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
1

Alternate Parts Comparison (IRS2008MPBFAUMA1 vs IRS2008MTRPBFXUMA1 vs IRS2007MTRPBFXUMA1 vs IRS2005MTRPBF)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case14-VFQFN Exposed Pad14-VFQFN Exposed Pad14-VFQFN Exposed Pad14-VFQFN Exposed Pad
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C (TA)-40°C ~ 125°C (TA)-40°C ~ 125°C (TA)-40°C ~ 150°C (TJ)
Supply Voltage10V ~ 20V10V ~ 20V10V ~ 20V10V ~ 20V
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Channel TypeSynchronousSynchronousSynchronousIndependent
Current Peak Output Source Sink290mA, 600mA290mA, 600mA290mA, 600mA290mA, 600mA
Driven ConfigurationHalf-BridgeHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeIGBT, N-Channel MOSFETIGBT, N-Channel MOSFETIGBT, N-Channel MOSFETIGBT, N-Channel MOSFET
High Side Voltage Max Bootstrap200 V200 V200 V200 V
Input TypeCMOSNon-InvertingNon-InvertingNon-Inverting
Action

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