Infineon Technologies IRGB4062DPBF BJTs
IGBT TRENCH 600V 48A TO220AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRGB4062DPBF
Detailed Description
IGBT TRENCH 600V 48A TO220AB
Package
TO-220-3
Lifecycle Status
Active
Datasheet
IRGB4062DPBF Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IRGB4062DPBF BJTs technical specifications.
General
Series
Rectifier Diode Module
RoHS
Yes
Mounting Type
Through Hole
Technology
Si
Configuration
Single
Collector Emitter Voltage Vceo Max
600 V
Collector Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
- 20 V, + 20 V
Continuous Collector Current at 25 C
48 A
Pd Power Dissipation
250 W
Related Parts Comparison (IRGB4062DPBF vs MMBTA06LT1G vs IKP20N60TXKSA1 vs IRG4BC20SPBF)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-220-3 | SOT23-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | -- | -- | Through Hole |
| Series | Rectifier Diode Module | -- | -- | -- |
| Collector Emitter Saturation Voltage | 1.95 V | -- | -- | -- |
| Collector Emitter Voltage Vceo Max | 600 V | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Continuous Collector Current at 25 C | 48 A | -- | -- | -- |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | -- | -- | -- |
| Minimum Operating Temperature C | - 55 | -- | -- | -- |
| Pd Power Dissipation | 250 W | -- | -- | -- |
| Technology | Si | -- | -- | -- |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
