Infineon Technologies IRF9Z24NSPBF MOSFETs
MOSFET P-CH 55V 12A D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF9Z24NSPBF
Detailed Description
MOSFET P-CH 55V 12A D2PAK
Package
TO-263-3,D2PAK(2Leads+Tab),TO-263AB
Lifecycle Status
Active
Datasheet
IRF9Z24NSPBF Datasheet
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Technical Specifications
Infineon Technologies IRF9Z24NSPBF MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
55 V
ID Continuous Drain Current
12 A
Rds on Drain Source Resistance
175 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Qg Gate Charge
12.7 nC
Alternate Parts Comparison (IRF9Z24NSPBF vs IRF2807STRLPBF vs IRF630NS vs IRF9Z24NS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-263-3,D2PAK(2Leads+Tab),TO-263AB | TO-263-3,D2PAK(2Leads+Tab),TO-263AB | TO-263-3,D2PAK(2Leads+Tab),TO-263AB | TO-263-3,D2PAK(2Leads+Tab),TO-263AB |
| Mounting Type | SMD/SMT | -- | SMD | SMD |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 37 ns | -- | -- | -- |
| ID Continuous Drain Current | 12 A | -- | -- | -- |
| Maximum Operating Temperature C | + 175 | -- | -- | -- |
| Minimum Operating Temperature C | - 55 | -- | -- | -- |
| Pd Power Dissipation | 45 W | -- | -- | -- |
| Qg Gate Charge | 12.7 nC | -- | -- | -- |
| Action |
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