Infineon Technologies IPW65R099C6 MOSFETs
MOSFETs N-Ch 700V 38A TO247-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPW65R099C6
Base Model
Detailed Description
MOSFETs N-Ch 700V 38A TO247-3
Package
TO-247
Lifecycle Status
Active
Datasheet
IPW65R099C6 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPW65R099C6 MOSFETs technical specifications.
General
Series
CoolMOS C6
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
650 V
ID Continuous Drain Current
38 A
Rds on Drain Source Resistance
89 mOhms
Alternate Parts Comparison (IPW65R099C6 vs IPW65R041CFD vs IPW65R070C6FKSA1 vs IPW65R065C7XKSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | RoHS Compliant | Yes | Yes |
| Package | TO-247 | -- | PG-TO247-3 | PG-TO247-3 |
| Series | CoolMOS C6 | CoolMOS CFD2 | -- | -- |
| Mounting Type | Through Hole | Through Hole | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Fall Time | 6 ns | 8 ns | -- | -- |
| ID Continuous Drain Current | 38 A | 68.5 A | -- | -- |
| Pd Power Dissipation | 278 W | 500 W | -- | -- |
| Qg Gate Charge | 127 nC | 300 nC | -- | -- |
| Action |
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