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Infineon Technologies IPP80N04S2-H4 MOSFETs

N-CHANNEL POWER MOSFET

200Infineon TechnologiesIPP80NTO-220-3$0.57
IPP80N04S2-H4 TO-220-3 package illustration

Same model may have multiple batches, images only for reference.

IPP80N04S2-H4
Part Number (MPN)
IPP80N04S2-H4
Base Model
Detailed Description
N-CHANNEL POWER MOSFET
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
PDF IPP80N04S2-H4 Datasheet
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Ordering Code Family

IPP80N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

8 ordering variants listed on the family page.

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Technical Specifications

Infineon Technologies IPP80N04S2-H4 MOSFETs technical specifications.

General

Series
OptiMOS™
RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Fet Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage Vdss
40 V
Current Continuous Drain ID 25 C
80A (Tc)
Drive Voltage Max Rds on Min Rds on
10V

Alternate Parts Comparison (IPP80N04S2-H4 vs IPP80N04S3-06 vs IPP80N04S4-03 vs IPP80N04S4-04)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYes--YesYes
PackageTO-220-3--TO-220-3TO-220-3
TechnologyMOSFET (Metal Oxide)--OptiMOS™-T2OptiMOS™-T2
SeriesOptiMOS™------
Mounting TypeThrough Hole------
Operating Temperature-55°C ~ 175°C (TJ)------
Lifecycle StatusObsolete------
Current Continuous Drain ID 25 C80A (Tc)------
Drain to Source Voltage Vdss40 V------
Drive Voltage Max Rds on Min Rds on10V------
Fet TypeN-Channel------
Gate Charge Qg Max Vgs148 nC @ 10 V------
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