Infineon Technologies IPP60R120C7 MOSFETs
Metal Oxide Semiconductor Field Effect Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPP60R120C7
Base Model
Detailed Description
Metal Oxide Semiconductor Field Effect Transistor
Package
TO-220-3
Lifecycle Status
Active
Datasheet
IPP60R120C7 Datasheet
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Technical Specifications
Infineon Technologies IPP60R120C7 MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
THT
Idpuls Max
66.0 A
Ptot Max
92.0 W
Polarity
N
Rthja Max
62.0 K/W
Rthjc Max
1.35 K/W
Vds Max
600.0 V
IC Max
19.0 A
Rds on Max
120.0 mΩ
Alternate Parts Comparison (IPP60R120C7 vs IPP60R125C6 vs IPP60R180P7 vs IPP60R099P7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | THT | THT | THT | THT |
| RoHS | Yes | Yes | Yes | Yes |
| Idpuls Max | 66.0 A | 89.0 A | 53.0 A | 100.0 A |
| Operating Temperature Min | -55.0 °C | -55.0 °C | -55.0 °C | -55.0 °C |
| Package | TO-220-3 | TO-220-3 | TO-220 | TO-220 |
| Polarity | N | N | N | N |
| Ptot Max | 92.0 W | 219.0 W | 72.0 W | 117.0 W |
| Rds on Max | 120.0 mΩ | 125.0 mΩ | 180.0 mΩ | 99.0 mΩ |
| Rthja Max | 62.0 K/W | 62.0 K/W | 62.0 K/W | 62.0 K/W |
| Rthjc Max | 1.35 K/W | 0.57 K/W | 1.74 K/W | 1.07 K/W |
| Vds Max | 600.0 V | 600.0 V | 600.0 V | 600.0 V |
| Vgs Th Max | 4.0 V | 3.5 V | 4.0 V | 4.0 V |
| Action |
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