Infineon Technologies IPG20N10S4L35ATMA1 MOSFETs
MOSFET 2N-CH 100V 20A 8TDSON
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPG20N10S4L35ATMA1
Base Model
Detailed Description
MOSFET 2N-CH 100V 20A 8TDSON
Package
TDSON-8
Lifecycle Status
Active
Datasheet
IPG20N10S4L35ATMA1 Datasheet
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Technical Specifications
Infineon Technologies IPG20N10S4L35ATMA1 MOSFETs technical specifications.
General
RoHS
True
Package
TDSON-8
Alternate Parts Comparison (IPG20N10S4L35ATMA1 vs IPG20N06S2L35ATMA1 vs IPG20N10S4L-22A vs IPG20N04S4-08)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | True | ROHS3 Compliant | True | True |
| Package | TDSON-8 | Tape & Reel (TR) | TDSON-8 | TDSON-8 |
| IC Max | -- | -- | 20.0 A | 20.0 A |
| Idpuls Max | -- | -- | 80.0 A | 80.0 A |
| Operating Temperature Max | -- | -- | 175.0 °C | 175.0 °C |
| Operating Temperature Min | -- | -- | -55.0 °C | -55.0 °C |
| Polarity | -- | -- | N+N | N+N |
| Ptot Max | -- | -- | 60.0 W | 65.0 W |
| Qg Max | -- | -- | 21.0 nC | 28.0 nC |
| Qualification | -- | AEC-Q101 | Automotive | Automotive |
| Rds on Max | -- | 35mO | 22.0 mΩ | 7.6 mΩ |
| Rthjc Max | -- | -- | 2.5 K/W | 2.3 K/W |
| Action |
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