Infineon Technologies IPD90N06S4-05 MOSFETs
OptiMOS-T2 Power-Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD90N06S4-05
Base Model
Detailed Description
OptiMOS-T2 Power-Transistor
Package
TO-252-3
Lifecycle Status
Active
Datasheet
IPD90N06S4-05 Datasheet
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Technical Specifications
Infineon Technologies IPD90N06S4-05 MOSFETs technical specifications.
General
RoHS
Yes
Idpuls Max
360.0 A
Rthjc Max
1.4 K/W
Ptot Max
107.0 W
Qualification
Automotive
Vds Max
60.0 V
Rds on Max
5.1 mΩ
Qg Max
62.0 nC
Vgs Th Max
4.0 V
Polarity
N
Alternate Parts Comparison (IPD90N06S4-05 vs IPD90N06S407ATMA2 vs IPD90N04S4L-04 vs IPD90N04S4-03)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Qualification | Automotive | AEC-Q101 | AEC-Q100 | AEC-Q100 |
| Technology | OptiMOS™-T2 | MOSFET (Metal Oxide) | Si | Si |
| Series | -- | OptiMOS™ | OptiMOS-T2 | OptiMOS-T2 |
| Package / Case | -- | TO-252-3, DPAK | DPAK-3 | DPAK-3 |
| Mounting Type | -- | Surface Mount | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | -55°C ~ 175°C (TJ) | - 55°C ~ + 175°C | - 55°C ~ + 175°C |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 5 ns | 28 ns | 15 ns |
| Pd Power Dissipation | -- | 79 W | 71 W | 94 W |
| Qg Gate Charge | -- | 56 nC | 60 nC | 66 nC |
| Action |
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