Infineon Technologies IPD60R3K3C6ATMA1 MOSFETs
MOSFET N-CH 600V 1.7A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD60R3K3C6ATMA1
Base Model
Detailed Description
MOSFET N-CH 600V 1.7A TO252-3
Package
TO-252-3
Lifecycle Status
Active
Datasheet
IPD60R3K3C6ATMA1 Datasheet
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Technical Specifications
Infineon Technologies IPD60R3K3C6ATMA1 MOSFETs technical specifications.
General
RoHS
Yes
Package
TO-252-3
Alternate Parts Comparison (IPD60R3K3C6ATMA1 vs IPD60R650CEAUMA1 vs IPD60R520CP vs IPD60R1K0CE)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant with Exemption | Yes | Yes |
| Package | TO-252-3 | Tape & Reel (TR) | TO-252-3 | TO-252 |
| Mounting Type | -- | Surface Mount | Surface Mount | SMT |
| Series | -- | CoolMOS™ CE | CoolMOS™ CP | -- |
| Operating Temperature | -- | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -- |
| Lifecycle Status | -- | Active | Obsolete | -- |
| Current Continuous Drain ID 25 C | -- | 9.9A (Tc) | 6.8A (Tc) | -- |
| Drain to Source Voltage Vdss | -- | 600 V | 600 V | -- |
| Drive Voltage Max Rds on Min Rds on | -- | 10 V | 10V | -- |
| Fet Type | -- | N-Channel | N-Channel | -- |
| Gate Charge Qg Max Vgs | -- | 20.5 nC @ 10 V | 31 nC @ 10 V | -- |
| Input Capacitance Ciss Max Vds | -- | 440 pF @ 100 V | 630 pF @ 100 V | -- |
| Action |
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