Infineon Technologies IPD50N04S408ATMA1 MOSFETs
MOSFET N-CH 40V 50A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD50N04S408ATMA1
Base Model
Detailed Description
MOSFET N-CH 40V 50A TO252-3
Package
PG-TO252-3
Lifecycle Status
Active
Datasheet
IPD50N04S408ATMA1 Datasheet
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Technical Specifications
Infineon Technologies IPD50N04S408ATMA1 MOSFETs technical specifications.
General
RoHS
Yes
Packaging
TAPE & REEL
Lifecycle Status
active and preferred
Halogen Free
Yes
Lead Free
Yes
Dry Pack
NON DRY
Completely Lead Free
No
Package
PG-TO252-3
Related Parts Comparison (IPD50N04S408ATMA1 vs IPD50N03S4L06ATMA1 vs IPD50N04S4L-08 vs IPD50N04S4-10)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | ROHS3 Compliant | -- | RoHS Compliant By Exemption |
| Lifecycle Status | active and preferred | active and preferred | -- | -- |
| Completely Lead Free | No | No | -- | -- |
| Dry Pack | NON DRY | NON DRY | -- | -- |
| Halogen Free | Yes | Halogen Free | -- | -- |
| Lead Free | Yes | Contains Lead | -- | -- |
| Package | PG-TO252-3 | -- | -- | -- |
| Series | -- | OptiMOS™ | OptiMOS-T2 | OptiMOS-T2 |
| Package / Case | -- | TO-252-3, DPAK | DPAK-3 | DPAK-3 |
| Mounting Type | -- | Surface Mount | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | -55°C ~ 175°C (TJ) | - 55°C ~ + 175°C | - 55°C ~ + 175°C |
| Number of Channels | -- | 1 | 1 Channel | 1 Channel |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
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Similaronsemi
Pin NoPkg NoElec Mixed
Power Field-Effect Transistor
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