Infineon Technologies IPB65R660CFDA MOSFETs
MOSFET N-CH 650V 6A TO263
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB65R660CFDA
Base Model
Detailed Description
MOSFET N-CH 650V 6A TO263
Package
PG-TO263-3
Lifecycle Status
Active
Datasheet
IPB65R660CFDA Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPB65R660CFDA MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMT
Idpuls Max
17.0 A
Rthja Max
62.0 K/W
Rthjc Max
2.0 K/W
Ptot Max
62.5 W
Regulator Topology
Full Bridge
Special Features
automotive
Qualification
Automotive
Vds Max
650.0 V
Alternate Parts Comparison (IPB65R660CFDA vs IPB65R050CFD7AATMA1 vs IPB65R190CFD vs IPB65R045C7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PG-TO263-3 | PG-TO263-3 | TO-263 | TO-263-3 |
| Mounting Type | SMT | -- | SMT | SMT |
| IC Max | 6.0 A | -- | 17.5 A | 46.0 A |
| Idpuls Max | 17.0 A | -- | 57.2 A | 212.0 A |
| Operating Temperature Max | 175.0 °C | -- | 150.0 °C | 150.0 °C |
| Operating Temperature Min | -55.0 °C | -- | -55.0 °C | -55.0 °C |
| Polarity | N | -- | N | N |
| Ptot Max | 62.5 W | -- | 151.0 W | 227.0 W |
| Rds on Max | 660.0 mΩ | -- | 190.0 mΩ | 45.0 mΩ |
| Rthja Max | 62.0 K/W | -- | 62.0 K/W | 62.0 K/W |
| Rthjc Max | 2.0 K/W | -- | 0.83 K/W | 0.55 K/W |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
NVB190N65S3FonsemiSimilaronsemi
Pin YesPkg YesElec Mixed
Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 20 A, 190 mΩ, D2PAK, 800-REEL
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