Skip to main content

Infineon Technologies IPB200N15N3G MOSFETs

IPB200N15 - 12V-300V N-CHANNEL P

30 ActiveInfineon TechnologiesIPB200NTO-263-3$1.42
IPB200N15N3G TO-263-3 package illustration

Same model may have multiple batches, images only for reference.

IPB200N15N3G
Part Number (MPN)
IPB200N15N3G
Base Model
Detailed Description
IPB200N15 - 12V-300V N-CHANNEL P
Package
TO-263-3
Lifecycle Status
Active
Datasheet
PDF IPB200N15N3G Datasheet
Quick Jump:
Ready to order?In stock and ready to ship.
Competitive Pricing
Fast & Reliable Delivery
Quality Assured

Ordering Code Family

IPB200N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

View all variants

Technical Specifications

Infineon Technologies IPB200N15N3G MOSFETs technical specifications.

General

RoHS
Yes
Idpuls Max
200.0 A
Ptot Max
150.0 W
Vds Max
150.0 V
Polarity
N
Rds on Max
20.0 mΩ
ID Max
50.0 A
Vgs Th Max
4.0 V
Vgs Th Min
2.0 V
Operating Temperature Max
175.0 °C

Related Parts Comparison (IPB200N15N3G vs IPB200N25N3G vs IRF3205ZSPBF vs IRF9530NSTRLPBF)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesCompliant with ExemptionYesYes
PackageTO-263-3--TO-263-3TO-263-3
ID Max50.0 A64.0 A----
Idpuls Max200.0 A256.0 A----
Operating Temperature Max175.0 °C175.0 °C----
Operating Temperature Min-55.0 °C-55.0 °C----
PolarityNN----
Ptot Max150.0 W300.0 W----
Rds on Max20.0 mΩ20.0 mΩ----
Vds Max150.0 V250.0 V----
Vgs Th Max4.0 V4.0 V----
Vgs Th Min2.0 V2.0 V----
Action

More Parts in MOSFETs

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.