Infineon Technologies IPB108N15N3G MOSFETs
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB108N15N3G
Detailed Description
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Lifecycle Status
Active
Datasheet
IPB108N15N3G Datasheet
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Technical Specifications
Infineon Technologies IPB108N15N3G MOSFETs technical specifications.
General
Package / Case
Bulk
Lifecycle Status
Active
Family
FETs - Single
IC Max
83.0 A
ID Max
83.0 A
Idpuls Max
332.0 A
Operating Temperature Max
175.0 °C
Operating Temperature Min
-55.0 °C
Polarity
N
Ptot Max
214.0 W
Alternate Parts Comparison (IPB108N15N3G vs IPB035N08N3GATMA1 vs IPB020N08N5ATMA1 vs IPB70N04S406ATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Bulk | -- | -- | -- |
| Lifecycle Status | Active | -- | -- | -- |
| Family | FETs - Single | -- | -- | -- |
| IC Max | 83.0 A | -- | -- | -- |
| ID Max | 83.0 A | -- | -- | -- |
| Idpuls Max | 332.0 A | -- | -- | -- |
| Operating Temperature Max | 175.0 °C | -- | -- | -- |
| Operating Temperature Min | -55.0 °C | -- | -- | -- |
| Polarity | N | -- | -- | -- |
| Ptot Max | 214.0 W | -- | -- | -- |
| Rds on Max | 10.8 mΩ | -- | -- | -- |
| Vds Max | 150.0 V | -- | -- | -- |
| Action |
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