Infineon Technologies IPB027N10N3G MOSFETs
OptiMOS®3 Power-Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB027N10N3G
Base Model
Detailed Description
OptiMOS®3 Power-Transistor
Package
TO-263-3,D²Pak(2Leads+Tab),TO-263AB
Lifecycle Status
Active
Datasheet
IPB027N10N3G Datasheet
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Technical Specifications
Infineon Technologies IPB027N10N3G MOSFETs technical specifications.
General
RoHS
Yes
Idpuls Max
480.0 A
Ptot Max
300.0 W
Vds Max
100.0 V
Polarity
N
Rds on Max
2.7 mΩ
IC Max
120.0 A
Vgs Th Max
3.5 V
Vgs Th Min
2.0 V
Operating Temperature Max
175.0 °C
Alternate Parts Comparison (IPB027N10N3G vs IPB027N10N3GATMA1 vs IPB035N08N3GATMA1 vs IPB042N10N3GATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-263-3,D²Pak(2Leads+Tab),TO-263AB | TO-263-3,D2PAK(2Leads+Tab),TO-263AB | PG-TO263-3 | TO-263-3,D2PAK(2Leads+Tab),TO-263AB |
| IC Max | 120.0 A | -- | -- | -- |
| Idpuls Max | 480.0 A | -- | -- | -- |
| Operating Temperature Max | 175.0 °C | -- | -- | -- |
| Operating Temperature Min | -55.0 °C | -- | -- | -- |
| Polarity | N | -- | -- | -- |
| Ptot Max | 300.0 W | -- | -- | -- |
| Rds on Max | 2.7 mΩ | -- | -- | -- |
| Vds Max | 100.0 V | -- | -- | -- |
| Vgs Th Max | 3.5 V | -- | -- | -- |
| Vgs Th Min | 2.0 V | -- | -- | -- |
| Action |
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