Infineon Technologies IPA80R1K4P7 MOSFETs
POWER FIELD-EFFECT TRANSISTOR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPA80R1K4P7
Base Model
Detailed Description
POWER FIELD-EFFECT TRANSISTOR
Package
TO-220 FullPAK
Lifecycle Status
Active
Datasheet
IPA80R1K4P7 Datasheet
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Technical Specifications
Infineon Technologies IPA80R1K4P7 MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
THT
Idpuls Max
8.9 A
Ptot Max
24.0 W
Polarity
N
Rthja Max
80.0 K/W
Rthjc Max
5.1 K/W
Vds Max
800.0 V
IC Max
4.0 A
Rds on Max
1400.0 mΩ
Alternate Parts Comparison (IPA80R1K4P7 vs IPA80R650CEXKSA2 vs IPA80R450P7XKSA1 vs IPA80R600P7XKSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-220 FullPAK | PG-TO220-3 | PG-TO220-3 | PG-TO220-3 |
| Lifecycle Status | -- | Active | active and preferred | active and preferred |
| Completely Lead Free | -- | Yes | Yes | Yes |
| Dry Pack | -- | NON DRY | NON DRY | NON DRY |
| Halogen Free | -- | Yes | Yes | Yes |
| Lead Free | -- | Yes | Yes | Yes |
| Action |
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