Infineon Technologies IPA65R650CEXKSA1 MOSFETs
MOSFET N-CH 650V 7A TO220
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPA65R650CEXKSA1
Base Model
Detailed Description
MOSFET N-CH 650V 7A TO220
Package
TO220-3
Lifecycle Status
Active
Datasheet
IPA65R650CEXKSA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPA65R650CEXKSA1 MOSFETs technical specifications.
General
Series
CoolMOS CE
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 40°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
650 V
ID Continuous Drain Current
10.1 A
Rds on Drain Source Resistance
650 mOhms
Alternate Parts Comparison (IPA65R650CEXKSA1 vs IPA65R150CFD vs IPA65R280C6XKSA1 vs IPA65R190C7XKSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | -- | Yes | Yes |
| Package | TO220-3 | -- | PG-TO220-3 | PG-TO220-3 |
| Series | CoolMOS CE | -- | -- | -- |
| Mounting Type | Through Hole | -- | -- | -- |
| Operating Temperature | - 40°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 11 ns | -- | -- | -- |
| ID Continuous Drain Current | 10.1 A | -- | -- | -- |
| Part Aliases | IPA65R650CE SP001295804 | -- | -- | -- |
| Pd Power Dissipation | 28 W | -- | -- | -- |
| Action |
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