Infineon Technologies IMW120R090M1HXKSA1 MOSFETs
SICFET N-CH 1.2KV 26A TO247-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IMW120R090M1HXKSA1
Base Model
Detailed Description
SICFET N-CH 1.2KV 26A TO247-3
Package
PG-TO247-3
Lifecycle Status
Active
Datasheet
IMW120R090M1HXKSA1 Datasheet
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Technical Specifications
Infineon Technologies IMW120R090M1HXKSA1 MOSFETs technical specifications.
General
Series
IMW120RXM1H
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
1.2 kV
ID Continuous Drain Current
26 A
Rds on Drain Source Resistance
117 mOhms
Related Parts Comparison (IMW120R090M1HXKSA1 vs IMW120R220M1HXKSA1 vs IMW120R014M1HXKSA1 vs IMW120R350M1HXKSA1)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PG-TO247-3 | PG-TO247-3 | PG-TO247-3 | TO-247-3 |
| Series | IMW120RXM1H | -- | -- | -- |
| Mounting Type | Through Hole | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 12.6 ns | -- | -- | -- |
| Forward Transconductance Min | 5 S | -- | -- | -- |
| ID Continuous Drain Current | 26 A | -- | -- | -- |
| Part Aliases | IMW120R090M1H SP001946164 | -- | -- | -- |
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