Infineon Technologies IGW75N65H5XKSA1 BJTs
650V IGBT high speed series fifth generation
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IGW75N65H5XKSA1
Base Model
Detailed Description
650V IGBT high speed series fifth generation
Package
PG-TO247-3
Lifecycle Status
Active
Datasheet
IGW75N65H5XKSA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IGW75N65H5XKSA1 BJTs technical specifications.
General
Series
Trenchstop IGBT5
RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
- 40°C ~ + 175°C
Technology
Si
Configuration
Single
Collector Emitter Voltage Vceo Max
650 V
Collector Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
- 20 V, 20 V
Continuous Collector Current at 25 C
120 A
Alternate Parts Comparison (IGW75N65H5XKSA1 vs IGW75N60T vs IGW75N60H3FKSA1 vs IGW25N120H3FKSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PG-TO247-3 | TO-247-3 | TO-247-3 | PG-TO247-3 |
| Series | Trenchstop IGBT5 | -- | TrenchStop® | -- |
| Mounting Type | Through Hole | -- | Through Hole | -- |
| Operating Temperature | - 40°C ~ + 175°C | -- | -40°C ~ 175°C (TJ) | -- |
| Technology | Si | IGBT TRENCHSTOP™ | -- | -- |
| Collector Emitter Saturation Voltage | 1.65 V | -- | -- | -- |
| Collector Emitter Voltage Vceo Max | 650 V | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Continuous Collector Current at 25 C | 120 A | -- | -- | -- |
| Gate Emitter Leakage Current | 100 nA | -- | -- | -- |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | -- | -- | -- |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
