Infineon Technologies BSZ018NE2LSI MOSFETs
MOSFETs N-Ch 25V 40A TSDSON-8 OptiMOS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSZ018NE2LSI
Base Model
Detailed Description
MOSFETs N-Ch 25V 40A TSDSON-8 OptiMOS
Package
TSDSON-8
Lifecycle Status
Active
Datasheet
BSZ018NE2LSI Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies BSZ018NE2LSI MOSFETs technical specifications.
General
RoHS
Yes
Idpuls Max
612.0 A
Ptot Max
69.0 W
Vds Max
25.0 V
Polarity
N
Rds on Max
2.5 mΩ
Special Features
Monolithically Integrated Schottky-like Diode
IC Max
153.0 A
Vgs Th Max
2.0 V
Vgs Th Min
1.2 V
Alternate Parts Comparison (BSZ018NE2LSI vs BSZ018NE2LSATMA1 vs BSZ16DN25NS3GATMA1 vs BSZ036NE2LSATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSDSON-8 | TSDSON-8 | PG-TSDSON-8 | TSDSON-8 |
| IC Max | 153.0 A | -- | -- | -- |
| Idpuls Max | 612.0 A | -- | -- | -- |
| Operating Temperature Max | 150.0 °C | -- | -- | -- |
| Operating Temperature Min | -55.0 °C | -- | -- | -- |
| Polarity | N | -- | -- | -- |
| Ptot Max | 69.0 W | -- | -- | -- |
| Rds on Max | 2.5 mΩ | -- | -- | -- |
| Special Features | Monolithically Integrated Schottky-like Diode | -- | -- | -- |
| Vds Max | 25.0 V | -- | -- | -- |
| Vgs Th Max | 2.0 V | -- | -- | -- |
| Action |
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