Infineon Technologies BSS83PH6327 MOSFETs
Trans MOSFET N-CH Si 10V 0.05A 4-Pin(3+Tab) SOT-143B
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSS83PH6327
Base Model
Detailed Description
Trans MOSFET N-CH Si 10V 0.05A 4-Pin(3+Tab) SOT-143B
Package
SOT-23-3
Lifecycle Status
Active
Datasheet
BSS83PH6327 Datasheet
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Technical Specifications
Infineon Technologies BSS83PH6327 MOSFETs technical specifications.
General
RoHS
RoHS Compliant
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Unit Weight
0.000282 oz
Configuration
Single
ID Continuous Drain Current
330 mA
Channel Mode
Enhancement
Related Parts Comparison (BSS83PH6327 vs BSS83PH6327XTSA1 vs BSS214NWH6327 vs BSS138NH6433XTMA1)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | RoHS Compliant | Yes | Yes | Yes |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 61 ns | -- | 1.4 ns | 8.2 ns |
| Forward Transconductance Min | 0.24 S | -- | 4 S | 100 mS |
| ID Continuous Drain Current | 330 mA | -- | 1.5 A | 230 mA |
| Pd Power Dissipation | 360 mW | -- | 500 mW | 360 mW |
| Qg Gate Charge | 2.38 nC | -- | 800 pC | 1 nC |
| Qualification | AEC-Q100 | -- | AEC-Q101 | AEC-Q101 |
| Rds on Drain Source Resistance | 1.4 Ohms | -- | 106 mOhms | 2.2 Ohms |
| Action |
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