Infineon Technologies BSS806NEH6327 MOSFETs
OptiMOS™2 Small-Signal-Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSS806NEH6327
Base Model
Detailed Description
OptiMOS™2 Small-Signal-Transistor
Lifecycle Status
Active
Datasheet
BSS806NEH6327 Datasheet
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Technical Specifications
Infineon Technologies BSS806NEH6327 MOSFETs technical specifications.
General
Series
BSS806
RoHS
Non-Compliant
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Channel Mode
Enhancement
Configuration
Single
Fall Time
3.7 ns
Forward Transconductance Min
9 S
ID Continuous Drain Current
2.3 A
Alternate Parts Comparison (BSS806NEH6327 vs BSS806NEH6327XTSA1 vs BSS214NWH6327 vs BSS138NH6433XTMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Non-Compliant | Yes | Yes | Yes |
| Series | BSS806 | -- | BSS214 | BSS138 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 3.7 ns | -- | 1.4 ns | 8.2 ns |
| Forward Transconductance Min | 9 S | -- | 4 S | 100 mS |
| ID Continuous Drain Current | 2.3 A | -- | 1.5 A | 230 mA |
| Pd Power Dissipation | 500 mW | -- | 500 mW | 360 mW |
| Qg Gate Charge | 1.7 nC | -- | 800 pC | 1 nC |
| Qualification | AEC-Q101 | -- | AEC-Q101 | AEC-Q101 |
| Action |
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