Infineon Technologies BSS169H6327XTSA1 MOSFETs
MOSFET N-CH 100V 170MA SOT23-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSS169H6327XTSA1
Detailed Description
MOSFET N-CH 100V 170MA SOT23-3
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies BSS169H6327XTSA1 MOSFETs technical specifications.
General
Series
SIPMOS®
RoHS
Compliant
Number of Pins
3
Number of Channels
1 Channel
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
Yes
Channel Mode
Depletion
Alternate Parts Comparison (BSS169H6327XTSA1 vs BSS670S2LH6433XTMA1 vs BSS214NWH6327 vs BSS138NH6433XTMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Compliant | Yes | Yes | Yes |
| Channel Mode | Depletion | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 27 ns | 24 ns | 1.4 ns | 8.2 ns |
| Forward Transconductance Min | 0.2 S | 600 mS | 4 S | 100 mS |
| Pd Power Dissipation | 360 mW | 360 mW | 500 mW | 360 mW |
| Qg Gate Charge | 2.1 nC | 1.7 nC | 800 pC | 1 nC |
| Qualification | AEC-Q100 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Rds on Drain Source Resistance | 2.9 Ohms | 346 mOhms | 106 mOhms | 2.2 Ohms |
| Rise Time | 2.7 ns | 25 ns | 7.8 ns | 3 ns |
| Action |
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