Infineon Technologies BSR302N MOSFETs
OptiMOS2 Small-Signal-Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSR302N
Detailed Description
OptiMOS2 Small-Signal-Transistor
Lifecycle Status
Active
Datasheet
BSR302N Datasheet
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Technical Specifications
Infineon Technologies BSR302N MOSFETs technical specifications.
General
Number of Pins
3
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating Eas
30 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
Ds Breakdown Voltage Min
30 V
Drain Current Max ID
3.7 A
Drain Source on Resistance Max
0.023 Ω
Fet Technology
METAL-OXIDE SEMICONDUCTOR
ID Max
3.7 A
Idpuls Max
14.7 A
Alternate Parts Comparison (BSR302N vs BSR202NL6327HTSA1 vs BSR315PH6327XTSA1 vs BSR802NL6327HTSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Number of Pins | 3 | -- | -- | 3 |
| Configuration | SINGLE WITH BUILT-IN DIODE | -- | -- | Single |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | -- | -- | -- |
| Avalanche Energy Rating Eas | 30 mJ | -- | -- | -- |
| Drain Current Max ID | 3.7 A | -- | -- | -- |
| Drain Source on Resistance Max | 0.023 Ω | -- | -- | -- |
| Ds Breakdown Voltage Min | 30 V | -- | -- | -- |
| Fet Technology | METAL-OXIDE SEMICONDUCTOR | -- | -- | -- |
| ID Max | 3.7 A | -- | -- | -- |
| Idpuls Max | 14.7 A | -- | -- | -- |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | -- | -- | -- |
| Jesd 30 Code | R-PDSO-G3 | -- | -- | -- |
| Action |
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