Infineon Technologies BSC010NE2LSI MOSFETs
Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSC010NE2LSI
Base Model
Detailed Description
Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R
Package
TDSON-8
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies BSC010NE2LSI MOSFETs technical specifications.
General
RoHS
Yes
Idpuls Max
944.0 A
Ptot Max
96.0 W
Vds Max
25.0 V
Polarity
N
Rds on Max
1.4 mΩ
Special Features
Monolithically Integrated Schottky-like Diode
IC Max
236.0 A
Vgs Th Max
2.0 V
Vgs Th Min
1.2 V
Alternate Parts Comparison (BSC010NE2LSI vs BSC010NE2LSATMA1 vs BSC010NE2LS vs BSC010N04LS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TDSON-8 | TDSON-8 | 8-PowerTDFN | TDSON-8 |
| IC Max | 236.0 A | -- | 242.0 A | -- |
| Idpuls Max | 944.0 A | -- | 968.0 A | -- |
| Operating Temperature Max | 150.0 °C | -- | 150.0 °C | -- |
| Operating Temperature Min | -55.0 °C | -- | -55.0 °C | -- |
| Polarity | N | -- | N | -- |
| Ptot Max | 96.0 W | -- | 96.0 W | -- |
| Rds on Max | 1.4 mΩ | -- | 1.3 mΩ | -- |
| Vds Max | 25.0 V | -- | 25.0 V | -- |
| Vgs Th Max | 2.0 V | -- | 2.0 V | -- |
| Vgs Th Min | 1.2 V | -- | 1.2 V | -- |
| Action |
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