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Infineon Technologies BFS17WE6327 RF BJT

BFS17WE6327 by Infineon Technologies · RF BJT · SC-70, SOT-323

In Stock ActiveInfineon TechnologiesSC-70, SOT-323
BFS17WE6327 SC-70, SOT-323 package illustration

Same model may have multiple batches, images only for reference.

BFS17WE6327
Part Number (MPN)
BFS17WE6327
Package
SC-70, SOT-323
Lifecycle Status
Active
Datasheet
PDF BFS17WE6327 Datasheet
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Technical Specifications

Infineon Technologies BFS17WE6327 RF BJT technical specifications.

General

Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Power Max
280mW
Transistor Type
NPN
Current Collector IC Max
25mA
Voltage Collector Emitter Breakdown Max
15V
Dc Current Gain Hfe Min IC Vce
40 @ 2mA, 1V
Frequency Transition
1.4GHz

Alternate Parts Comparison (BFS17WE6327 vs BFS17SH6327XTSA1 vs BFS481H6327XTSA1 vs BFS17WH6327XTSA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Lifecycle StatusActivediscontinuedactive and preferrednot for new design
Package / CaseSC-70, SOT-323------
Mounting TypeSurface Mount------
Operating Temperature150°C (TJ)------
Current Collector IC Max25mA------
Dc Current Gain Hfe Min IC Vce40 @ 2mA, 1V------
Frequency Transition1.4GHz------
Noise Figure Db Typ F3.5dB ~ 5dB @ 800MHz------
Power Max280mW------
Transistor TypeNPN------
Voltage Collector Emitter Breakdown Max15V------
Completely Lead Free--YesYesYes
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