Infineon Technologies BFR93AWH6327 RF BJT
RF Bipolar Transistors RF BIP TRANSISTOR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFR93AWH6327
Detailed Description
RF Bipolar Transistors RF BIP TRANSISTOR
Package
SOT-323
Lifecycle Status
Active
Datasheet
BFR93AWH6327 Datasheet
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Technical Specifications
Infineon Technologies BFR93AWH6327 RF BJT technical specifications.
General
Series
BFR93
Package / Case
SOT-323
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Collector Emitter Voltage Vceo Max
12 V
Continuous Collector Current
90 mA
Dc Collector Base Gain Hfe Min
70
Emitter Base Voltage Vebo
2 V
Maximum Dc Collector Current
90 mA
Alternate Parts Comparison (BFR93AWH6327 vs BFR 380F E6327 vs BFR949L3E6327 vs BFR93AWH6327XTSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-323 | SOT-723 | SC-101, SOT-883 | -- |
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | -- |
| Operating Temperature | - 65°C ~ + 150°C | 150°C (TJ) | 150°C (TJ) | -- |
| Transistor Type | Bipolar | NPN | NPN | -- |
| Collector Emitter Voltage Vceo Max | 12 V | -- | 10 V | -- |
| Emitter Base Voltage Vebo | 2 V | -- | 1.5 V | -- |
| Maximum Dc Collector Current | 90 mA | -- | 50 mA | -- |
| Pd Power Dissipation | 300 mW | -- | 250 mW | -- |
| Technology | Si | -- | Si | -- |
| Transistor Polarity | NPN | -- | NPN | -- |
| Series | BFR93 | -- | -- | -- |
| Continuous Collector Current | 90 mA | -- | -- | -- |
| Action |
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