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Infineon Technologies BFR750L3RHE6327XTSA1 RF BJT

BFR750L3RHE6327XTSA1 by Infineon Technologies · RF BJT · SC-101, SOT-883

In StockInfineon TechnologiesSC-101, SOT-883
BFR750L3RHE6327XTSA1 SC-101, SOT-883 package illustration

Same model may have multiple batches, images only for reference.

BFR750L3RHE6327XTSA1
Part Number (MPN)
BFR750L3RHE6327XTSA1
Package
SC-101, SOT-883
Lifecycle Status
Obsolete
Datasheet
PDF BFR750L3RHE6327XTSA1 Datasheet
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Technical Specifications

Infineon Technologies BFR750L3RHE6327XTSA1 RF BJT technical specifications.

General

Package / Case
SC-101, SOT-883
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
90 mA
Dc Current Gain Hfe Min IC Vce
160 @ 60mA, 3V
Frequency Transition
37 GHz
Gain
21dB
Moisture Sensitivity Level MSL
1 (Unlimited)
Noise Figure Db Typ F
0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz

Alternate Parts Comparison (BFR750L3RHE6327XTSA1 vs BFR 380F E6327 vs BFR949L3E6327 vs BFR93AWH6327XTSA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-101, SOT-883SOT-723SC-101, SOT-883--
Mounting TypeSurface MountSurface MountSurface Mount--
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)--
Current Collector IC Max90 mA80mA50mA--
Dc Current Gain Hfe Min IC Vce160 @ 60mA, 3V90 @ 40mA, 3V100 @ 5mA, 6V--
Frequency Transition37 GHz14GHz9GHz--
Gain21dB9.5dB ~ 13.5dB21.5dB--
Noise Figure Db Typ F0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz1dB ~ 2.5dB @ 1GHz--
Power Max360 mW380mW250mW--
Transistor TypeNPNNPNNPN--
Voltage Collector Emitter Breakdown Max4.7 V9V10V--
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