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Infineon Technologies BFR183WH6327XTSA1 RF BJT

BFR183WH6327XTSA1 by Infineon Technologies · RF BJT · SC-70,SOT-323

In StockInfineon TechnologiesSC-70,SOT-323
BFR183WH6327XTSA1 SC-70,SOT-323 package illustration

Same model may have multiple batches, images only for reference.

BFR183WH6327XTSA1
Part Number (MPN)
BFR183WH6327XTSA1
Package
SC-70,SOT-323
Lifecycle Status
Obsolete
Datasheet
PDF BFR183WH6327XTSA1 Datasheet
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Technical Specifications

Infineon Technologies BFR183WH6327XTSA1 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Frequency Transition
8GHz
Noise Figure Db Typ F
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain
18.5dB
Power Max
450mW

Alternate Parts Comparison (BFR183WH6327XTSA1 vs BFR 380F E6327 vs BFR949L3E6327 vs BFR93AWH6327XTSA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface Mount--
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)--
RoHSYes--YesYes
Current Collector IC Max65mA80mA50mA--
Dc Current Gain Hfe Min IC Vce70 @ 15mA, 8V90 @ 40mA, 3V100 @ 5mA, 6V--
Frequency Transition8GHz14GHz9GHz--
Gain18.5dB9.5dB ~ 13.5dB21.5dB--
Noise Figure Db Typ F0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz1dB ~ 2.5dB @ 1GHz--
Power Max450mW380mW250mW--
Transistor TypeNPNNPNNPN--
Voltage Collector Emitter Breakdown Max12V9V10V--
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