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Infineon Technologies BFR-740L3-E6327 RF BJT

BFR-740L3-E6327 by Infineon Technologies · RF BJT · PG-TSLP-3

In StockInfineon TechnologiesPG-TSLP-3
BFR-740L3-E6327 PG-TSLP-3 package illustration

Same model may have multiple batches, images only for reference.

BFR-740L3-E6327
Part Number (MPN)
BFR-740L3-E6327
Package
PG-TSLP-3
Lifecycle Status
Obsolete
Datasheet
PDF BFR-740L3-E6327 Datasheet
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Technical Specifications

Infineon Technologies BFR-740L3-E6327 RF BJT technical specifications.

General

Package / Case
Tape & Reel
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
30 mA
Dc Current Gain Hfe Min IC Vce
160 @ 25mA, 3V
Frequency Transition
42 GHz
Gain
24dB
Noise Figure Db Typ F
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Power Max
160 mW

Alternate Parts Comparison (BFR-740L3-E6327 vs BFR 380F E6327 vs BFR949L3E6327 vs BFR93AWH6327XTSA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTape & ReelSOT-723SC-101, SOT-883--
Mounting TypeSurface MountSurface MountSurface Mount--
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)--
Current Collector IC Max30 mA80mA50mA--
Dc Current Gain Hfe Min IC Vce160 @ 25mA, 3V90 @ 40mA, 3V100 @ 5mA, 6V--
Frequency Transition42 GHz14GHz9GHz--
Gain24dB9.5dB ~ 13.5dB21.5dB--
Noise Figure Db Typ F0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz1dB ~ 2.5dB @ 1GHz--
Power Max160 mW380mW250mW--
Transistor TypeNPNNPNNPN--
Voltage Collector Emitter Breakdown Max4.7 V9V10V--
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