Infineon Technologies BFP650H6327 RF BJT
High Linearity Silicon Germanium Bipolar RF Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFP650H6327
Base Model
Detailed Description
High Linearity Silicon Germanium Bipolar RF Transistor
Lifecycle Status
Active
Datasheet
BFP650H6327 Datasheet
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Technical Specifications
Infineon Technologies BFP650H6327 RF BJT technical specifications.
General
Series
BFP650
Mounting Type
SMD/SMT
Collector Emitter Voltage Vceo Max
4 V
Continuous Collector Current
150 mA
Emitter Base Voltage Vebo
1.2 V
Operating Frequency
37 GHz
Part Aliases
SP000750406 BFP65H6327XT BFP650H6327XTSA1
Pd Power Dissipation
500 mW (1/2 W)
Qualification
AEC-Q101
Reference Date Code
1305+
Alternate Parts Comparison (BFP650H6327 vs BFP650H6327XTSA1 vs BFP420H6433XTMA1 vs BFP460H6327XTSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | -- | Surface Mount | Surface Mount |
| Transistor Type | Bipolar | -- | NPN | NPN |
| Part Aliases | SP000750406 BFP65H6327XT BFP650H6327XTSA1 | -- | BFP 420 H6433 SP000745262 | -- |
| Technology | SiGe | -- | Si | -- |
| Series | BFP650 | -- | -- | -- |
| Collector Emitter Voltage Vceo Max | 4 V | -- | -- | -- |
| Continuous Collector Current | 150 mA | -- | -- | -- |
| Emitter Base Voltage Vebo | 1.2 V | -- | -- | -- |
| Operating Frequency | 37 GHz | -- | -- | -- |
| Pd Power Dissipation | 500 mW (1/2 W) | -- | -- | -- |
| Qualification | AEC-Q101 | -- | -- | -- |
| Reference Case | SOT343-4 | -- | -- | -- |
| Action |
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