Infineon Technologies BFP640H6327 RF BJT
NPN Silicon Germanium RF Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFP640H6327
Base Model
Detailed Description
NPN Silicon Germanium RF Transistor
Lifecycle Status
Active
Datasheet
BFP640H6327 Datasheet
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Technical Specifications
Infineon Technologies BFP640H6327 RF BJT technical specifications.
General
Series
BFP640
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Collector Emitter Voltage Vceo Max
4 V
Configuration
Single
Continuous Collector Current
50 mA
Dc Collector Base Gain Hfe Min
110
Emitter Base Voltage Vebo
1.2 V
Operating Frequency
40 GHz
Part Aliases
BFP64H6327XT SP000745306 BFP640H6327XTSA1
Alternate Parts Comparison (BFP640H6327 vs BFP640H6327XTSA1 vs BFP420H6433XTMA1 vs BFP460H6327XTSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| Operating Temperature | - 65°C ~ + 150°C | -- | 150°C (TJ) | 150°C (TJ) |
| Part Aliases | BFP64H6327XT SP000745306 BFP640H6327XTSA1 | BFP 640 H6327 SP000745306 | BFP 420 H6433 SP000745262 | -- |
| Technology | SiGe | Si | Si | -- |
| Transistor Type | Bipolar | -- | NPN | NPN |
| Package | -- | SOT343-4 | SOT-343-4 | SOT343-4 |
| Action |
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