Infineon Technologies BFP540ESDE6327HTSA1 RF BJT
BFP540ESDE6327HTSA1 by Infineon Technologies · RF BJT · SC-82A, SOT-343
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFP540ESDE6327HTSA1
Package
SC-82A, SOT-343
Lifecycle Status
Obsolete
Datasheet
BFP540ESDE6327HTSA1 Datasheet
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Technical Specifications
Infineon Technologies BFP540ESDE6327HTSA1 RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
5V
Frequency Transition
30GHz
Noise Figure Db Typ F
0.9dB ~ 1.4dB @ 1.8GHz
Gain
21.5dB
Power Max
250mW
Alternate Parts Comparison (BFP540ESDE6327HTSA1 vs BFP420H6433XTMA1 vs BFP460H6327XTSA1 vs BFP193E6327HTSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Current Collector IC Max | 80mA | 35mA | 70mA | 80mA |
| Dc Current Gain Hfe Min IC Vce | 50 @ 20mA, 3.5V | 60 @ 20mA, 4V | 90 @ 20mA, 3V | 70 @ 30mA, 8V |
| Frequency Transition | 30GHz | 25GHz | 22GHz | 8GHz |
| Gain | 21.5dB | 21dB | 12.5dB ~ 26.5dB | 12dB ~ 18dB |
| Noise Figure Db Typ F | 0.9dB ~ 1.4dB @ 1.8GHz | 1.1dB @ 1.8GHz | 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz |
| Package | SC-82A, SOT-343 | SOT-343-4 | SOT343-4 | SOT143-4-1 |
| Power Max | 250mW | 160mW | 230mW | 580mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 5V | 5V | 5.8V | 12V |
| Action |
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