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Infineon Technologies BFP450H6327 RF BJT

BFP450H6327 by Infineon Technologies · RF BJT · SOT-343

15,000 ActiveInfineon TechnologiesSOT-343$0.75
BFP450H6327 SOT-343 package illustration

Same model may have multiple batches, images only for reference.

BFP450H6327
Part Number (MPN)
BFP450H6327
Package
SOT-343
Lifecycle Status
Active
Datasheet
PDF BFP450H6327 Datasheet
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Technical Specifications

Infineon Technologies BFP450H6327 RF BJT technical specifications.

General

Series
BFP450
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
NPN
Operating Frequency
24 GHz
Dc Collector Base Gain Hfe Min
60
Collector Emitter Voltage Vceo Max
15 V

Alternate Parts Comparison (BFP450H6327 vs BFP420H6433XTMA1 vs BFP460H6327XTSA1 vs BFP193E6327HTSA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature- 65°C ~ + 150°C150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
PackageSOT-343SOT-343-4SOT343-4SOT143-4-1
Transistor TypeBipolarNPNNPNNPN
Package / Case--SC-82A, SOT-343SC-82A, SOT-343TO-253-4, TO-253AA
Base Part Number--BFP420BFP460BFP193
Current Collector IC Max--35mA70mA80mA
Dc Current Gain Hfe Min IC Vce--60 @ 20mA, 4V90 @ 20mA, 3V70 @ 30mA, 8V
Frequency Transition--25GHz22GHz8GHz
Gain--21dB12.5dB ~ 26.5dB12dB ~ 18dB
Noise Figure Db Typ F--1.1dB @ 1.8GHz0.7dB ~ 1.2dB @ 100MHz ~ 3GHz1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
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