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Infineon Technologies BF771E6765N RF BJT

BF771E6765N by Infineon Technologies · RF BJT · SOT23-3

3,210 ActiveInfineon TechnologiesSOT23-3$0.10
BF771E6765N SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

BF771E6765N
Part Number (MPN)
BF771E6765N
Package
SOT23-3
Lifecycle Status
Active
Datasheet
PDF BF771E6765N Datasheet
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Technical Specifications

Infineon Technologies BF771E6765N RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Frequency Transition
8GHz
Noise Figure Db Typ F
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain
15dB
Power Max
580mW

Alternate Parts Comparison (BF771E6765N vs BF799WE6327BTSA1 vs BFP420H6433XTMA1 vs BFP460H6327XTSA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
Current Collector IC Max80mA35mA35mA70mA
Dc Current Gain Hfe Min IC Vce70 @ 30mA, 8V40 @ 20mA, 10V60 @ 20mA, 4V90 @ 20mA, 3V
Frequency Transition8GHz800MHz25GHz22GHz
Noise Figure Db Typ F1dB ~ 1.6dB @ 900MHz ~ 1.8GHz3dB @ 100MHz1.1dB @ 1.8GHz0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
PackageSOT23-3SC-70,SOT-323SOT-343-4SOT343-4
Power Max580mW280mW160mW230mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max12V20V5V5.8V
Lifecycle StatusActiveObsolete--active and preferred
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