Infineon Technologies 2EDS8165HXUMA1 Gate Drivers
IC GATE DRVR HALF-BRIDG DSO16-30
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2EDS8165HXUMA1
Detailed Description
IC GATE DRVR HALF-BRIDG DSO16-30
Package
16-SOIC (0.295", 7.50mm Width)
Key Features
Package / Case: 16-SOIC (0.295", 7.50mm Width); Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
2EDS8165HXUMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies 2EDS8165HXUMA1 Gate Drivers technical specifications.
General
Series
Single
RoHS
True
Package / Case
16-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TA)
Supply Voltage
20V
Lifecycle Status
Obsolete
Input Type
Non-Inverting
Channel Type
Independent
Driven Configuration
Half-Bridge
Alternate Parts Comparison (2EDS8165HXUMA1 vs IR2113STR vs IRS2112STRPBF vs IR2125S)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 16-SOIC | 16-SOIC | 16-SOIC | 16-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TA) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Supply Voltage | 20V | 3.3V ~ 20V | 10V ~ 20V | 0V ~ 18V |
| Channel Type | Independent | Independent | Independent | Single |
| Current Peak Output Source Sink | 1A, 2A | 2A, 2A | 290mA, 600mA | 1.6A, 3.3A |
| Driven Configuration | Half-Bridge | Half-Bridge | Half-Bridge | High-Side |
| Gate Type | N-Channel, P-Channel MOSFET | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET |
| Input Type | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Logic Voltage - VIL, VIH | -, 1.65V | 6V, 9.5V | 6V, 9.5V | 0.8V, 2.2V |
| Number of Drivers | 2 | 2 | 2 | 1 |
| Rise Fall Time Typ | 6.5ns, 4.5ns | 25ns, 17ns | 75ns, 35ns | 43ns, 26ns |
| Action |
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