Infineon Technologies 2ED2110S06MXUMA1 Gate Drivers
LEVEL SHIFT SOI
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2ED2110S06MXUMA1
Detailed Description
LEVEL SHIFT SOI
Package
16-SOIC (0.295", 7.50mm Width)
Key Features
Package / Case: 16-SOIC (0.295", 7.50mm Width); Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
2ED2110S06MXUMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies 2ED2110S06MXUMA1 Gate Drivers technical specifications.
General
RoHS
Yes
Package / Case
16-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TA)
Supply Voltage
10V ~ 20V
Lifecycle Status
Active
Input Type
Non-Inverting
Channel Type
Independent
Driven Configuration
High-Side and Low-Side
Number of Drivers
2
Alternate Parts Comparison (2ED2110S06MXUMA1 vs 2EDS8265HXUMA2 vs 2EDS7165HXUMA1 vs 2ED1322S12MXUMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 16-SOIC | 16-SOIC | 16-SOIC | 16-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TA) | -40°C ~ 125°C (TA) | -40°C ~ 125°C (TA) | -40°C ~ 125°C (TA) |
| Supply Voltage | 10V ~ 20V | 20V | 20V | 13V ~ 20V |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Channel Type | Independent | Independent | Independent | Independent |
| Current Peak Output Source Sink | 2.5A, 2.5A | 4A, 8A | 1A, 2A | 2.3A, 4.6A |
| Driven Configuration | High-Side and Low-Side | Half-Bridge | Half-Bridge | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET | N-Channel, P-Channel MOSFET | N-Channel, P-Channel MOSFET | IGBT, SiC MOSFET |
| Halogen Free | Yes | Yes | Yes | Yes |
| Input Type | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Action |
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