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Infineon Technologies 2ED2110S06MXUMA1 Gate Drivers

LEVEL SHIFT SOI

14,139 ActiveInfineon Technologies16-SOIC (0.295", 7.50mm Width)$3.84RoHS
2ED2110S06MXUMA1 - No Image Available

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2ED2110S06MXUMA1
Part Number (MPN)
2ED2110S06MXUMA1
Detailed Description
LEVEL SHIFT SOI
Package
16-SOIC (0.295", 7.50mm Width)
Key Features
Package / Case: 16-SOIC (0.295", 7.50mm Width); Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF 2ED2110S06MXUMA1 Datasheet
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Technical Specifications

Infineon Technologies 2ED2110S06MXUMA1 Gate Drivers technical specifications.

General

Package / Case
16-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TA)
Supply Voltage
10V ~ 20V
Input Type
Non-Inverting
Channel Type
Independent
Driven Configuration
High-Side and Low-Side
Number of Drivers
2
Gate Type
IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH
6V, 14V

Alternate Parts Comparison (2ED2110S06MXUMA1 vs 2EDS8265HXUMA2 vs 2EDS7165HXUMA1 vs 2ED1322S12MXUMA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case16-SOIC16-SOIC16-SOIC16-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C (TA)-40°C ~ 125°C (TA)-40°C ~ 125°C (TA)-40°C ~ 125°C (TA)
Supply Voltage10V ~ 20V20V20V13V ~ 20V
Channel TypeIndependentIndependentIndependentIndependent
Current Peak Output Source Sink2.5A, 2.5A4A, 8A1A, 2A2.3A, 4.6A
Driven ConfigurationHigh-Side and Low-SideHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeIGBT, N-Channel MOSFETN-Channel, P-Channel MOSFETN-Channel, P-Channel MOSFETIGBT, SiC MOSFET
Input TypeNon-InvertingNon-InvertingNon-InvertingNon-Inverting
Logic Voltage - VIL, VIH6V, 14V-, 1.65V-, 1.65V1.1V, 1.7V
Number of Drivers2222
Rise Fall Time Typ25ns, 17ns6.5ns, 4.5ns6.5ns, 4.5ns48ns, 48ns
Action

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