Infineon Technologies 2ED020I12-F Gate Drivers
IC GATE DRVR HALF-BRIDGE DSO18-2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2ED020I12-F
Detailed Description
IC GATE DRVR HALF-BRIDGE DSO18-2
Package
18-SOIC (0.295", 7.50mm Width)
Key Features
Package / Case: 18-SOIC (0.295", 7.50mm Width); Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
2ED020I12-F Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies 2ED020I12-F Gate Drivers technical specifications.
General
Series
Dual
RoHS
Yes
Package / Case
18-SOIC
Mounting Type
Surface Mount
Supply Voltage
0V ~ 18V
Lifecycle Status
Obsolete
Input Type
Inverting
Channel Type
Independent
Driven Configuration
Half-Bridge
Number of Drivers
2
Alternate Parts Comparison (2ED020I12-F vs 6ED2231S12TXUMA1 vs 2ED020I06FIXUMA1 vs 2ED020I12FIXUMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 18-SOIC | 28-SOIC | 18-SOIC | 18-SOIC |
| Supply Voltage | 0V ~ 18V | 13V ~ 20V | 14V ~ 18V | 14V ~ 18V |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Channel Type | Independent | 3-Phase | Independent | Independent |
| Current Peak Output Source Sink | 1A, 2A | 350mA, 650mA | 1A, 2A | 1A, 2A |
| Driven Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET | IGBT, SiC MOSFET | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET |
| High Side Voltage Max Bootstrap | 1200 V | 1200 V | 650 V | 1200 V |
| Input Type | Inverting | Non-Inverting | Inverting | Inverting |
| Number of Drivers | 2 | 6 | 2 | 2 |
| Package | SOP-18 | PG-DSO-24 | SOIC-18 | SOIC-18 |
| Action |
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