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Diodes Incorporated ZXMP6A16DN8TC MOSFETs

MOSFET 2P-CH 60V 2.9A 8SO

17,500 ActiveDiodes IncorporatedZXMP6A16DN88-SOIC (0.154", 3.90mm Width)$0.90
ZXMP6A16DN8TC 8-SOIC (0.154", 3.90mm Width) package illustration

Same model may have multiple batches, images only for reference.

ZXMP6A16DN8TC
Part Number (MPN)
ZXMP6A16DN8TC
Base Model
Detailed Description
MOSFET 2P-CH 60V 2.9A 8SO
Package
8-SOIC (0.154", 3.90mm Width)
Lifecycle Status
Active
Datasheet
PDF ZXMP6A16DN8TC Datasheet
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Ordering Code Family

ZXMP6A16DN8 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated ZXMP6A16DN8TC MOSFETs technical specifications.

General

Series
ZXMP6A
RoHS
Compliant
Number of Pins
8
Number of Channels
2 Channel
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
No
Channel Mode
Enhancement

Alternate Parts Comparison (ZXMP6A16DN8TC vs ZXMP6A16DN8TA vs ZXMC3A16DN8QTA vs DMN3007LSS-13)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSCompliantCompliantCompliantROHS3 Compliant
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C2.9 A3.9A (Ta)6.4A (Ta), 5.4A (Ta)16A (Ta)
Drain to Source Voltage Vdss60 V60 V30 V30 V
Gate Charge Qg Max Vgs24.2nC @ 10V12.1nC @ 5V17.5nC @ 10V, 24.9nC @ 10V64.2 nC @ 10 V
Input Capacitance Ciss Max Vds1021pF @ 30V1021pF @ 30V796pF @ 25V, 970pF @ 15V2714 pF @ 15 V
Rds on Max ID Vgs85mOhm @ 2.9A, 10V85mOhm @ 2.9A, 10V35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V7mOhm @ 15A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs Th Max ID1V @ 250µA (Min)1V @ 250µA1V @ 250µA2.1V @ 250µA
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